• 論文徵稿開始
  • 論文投稿截止
  • 論文審查通知

論文投稿

學生論文競賽主題說明

新興元件EMERGING DEVICE

本主題範圍涵蓋各類新興電子元件,特別是奈米元件相關之技術、新型通道材料、物理與可靠性分析以及基於新型元件的小型電路製作等等,包含(但不限定)以下領域之論文。The section will solicit papers describing original work in emerging devices in areas such as, but not limited to:(1) Nano Device Technology; (2) High Mobility Channel MOSFETs; (3) High-k/Metal Gate Materials; (4) Process Technology; (5) TFT; (7) Nano Device Applications of 2D Materials; (8) Device Modeling and Simulation; (9) Reliability; (10) Small Circuits Based on Novel Devices。

先進邏輯、記憶體與整合技術ADVANCED LOGIC , MEMORY TECHNOLOGY and INTERGRATION

本主題範圍包括,但不限於以下主題:

應用於人工智慧(Artificial Intelligence)、物聯網(Internet of Things)、記憶體內計算 (In-memory computing)、量子計算(Quantum Computing)、高效能計算(High-performance Computing)、低功率與低電壓應用(Low power and Low voltage)、車用電子(自動駕駛與高密集計算)、下世代行動通訊(5G, Beyond 5G, and 6G)等領域所需之。The session solicit papers describing applications in AI, IoT, in-memory computing, quantum computing, high-performance computing, low power and low voltage, automobile electronics and 5G/beyond 5G mobile communications, but not limited to:

1.    前瞻邏輯元件與新穎架構 (Advanced logic devices and architectures );

2.    前瞻記憶體元件與新穎架構 (Advanced memory devices and architectures);

3.    整合邏輯、記憶體之先進單晶片技術與架構 (Technologies and architectures for the integration of logic and memory devices);

4.    整合晶片系統之先進3D-IC、封裝技術與架構 (Technologies and architectures of 3D-IC and packaging for chip integration);

5.    新穎電子防護技術與架構 (Innovative technologies and architectures of ESD);

前瞻感測器、高頻與功率元件技術ADVANCED SENSORS , HIGH FREQUENCY TECHNOLOGY and POWER DEVICES    

本主題範圍涵蓋兩大部分,第一部分是前瞻感測器,涵蓋微機電致動器、微機電與奈米生化感測器、3D IC異質整合應用相關的基礎建構與設計,包含(但不限定)以下領域之論文。This session covers two parts. The first one focuses on advanced sensors, design and integration, including (1) MEMS Actuator; (2) MEMS Sensor; (3) MEMS Process Technology; (4) MEMS Package & Testing; (5) Nano-scale Film; (6) Biosensors and Nano-structured Sensors; (7) Biomaterials Used for the Electronic Devices; (8) Electronic Manipulation of Biomolecules; (9) Bio-fuel Cells; (11) Biomedical Devices or Diagnostics; (12) 3D IC Design and Application; (13) 3D Device Process and Integration; (14) Monolithic 3DIC。

第二部分是高頻與功率元件技術,主要為射頻/微波/毫米波領域與功率半導體領域的元件、電路與系統之技術與應用,以及包含(但不限定)以下領域之論文。The second part of this session focuses on high-frequency and power device technologies, but not limited to (1) High-frequency Device Fabrication, Characterization and Modeling; (2) High-frequency Circuit Design and Simulation; (3) High-frequency Systems and Applications; (4) High-frequency Passive Devices; (5) High-frequency Measurement Techniques and EM Field Analysis; (6) Antennas and Propagation;(7) III-Nitride power/RF electronics; (8) III-V/III-Nitride MMIC; (9) SiC/Ga2O3/Si-Power electronics。

 新穎半導體材料與元件分析技術NOVEL MATERIALS and DEVICE ANALYSIS

本主題範圍涵蓋各類新興半導體元件材料例如後段金屬材料、高、低介電材料、二維材料、自旋電子材料、量子元件材料、功率元件材料等先進熱門材料研究領域或元件材料相關之檢測分析及檢測技術最新發展與應用,包含(但不限定)以下領域之論文。Topics of interest for submission include all aspects of novel semiconductor device materials and advanced analysis techniques such as BEOL metal, high-k or low-k material, 2D material, spintronics material, quantum material and power device material, etc., or characterizations, novel analysis techniques, and its application, but are not limited to: (1) Advanced material preparation and crystal structure growth (2) Analysis of emerging device integration technology and device (3) Image analysis, chemical elemental analysis, structural Diffraction nalysis.

 

 

 

論文相關問題請 E-mail至hlkao@narlabs.org.tw,謝謝您!